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X2816CJI-20 Datasheet(PDF) 1 Page - Xicor Inc. |
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X2816CJI-20 Datasheet(HTML) 1 Page - Xicor Inc. |
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1 / 16 page  X2816C 1 ©Xicor, 1995 Patents Pending Characteristics subject to change without notice 3852-1.4 3/27/96 T2/C3/D5 NS 5 Volt, Byte Alterable E2PROM FEATURES • 90ns Access Time • Simple Byte and Page Write —Single 5V Supply —No External High Voltages or VPP Control Circuits —Self-Timed —No Erase Before Write —No Complex Programming Algorithms —No Overerase Problem • High Performance Advanced NMOS Technology • Fast Write Cycle Times —16 Byte Page Write Operation —Byte or Page Write Cycle: 5ms Typical —Complete Memory Rewrite: 640ms Typical —Effective Byte Write Cycle Time: 300 µs Typical • DATA Polling —Allows User to Minimize Write Cycle Time • JEDEC Approved Byte-Wide Pinout • High Reliability —Endurance: 10,000 Cycles —Data Retention: 100 Years DESCRIPTION The Xicor X2816C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channel floating gate MOS technology. Like all Xicor Programmable nonvola- tile memories it is a 5V only device. The X2816C features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs, ROMs and EPROMs. The X2816C supports a 16-byte page write operation, typically providing a 300 µs/byte write cycle, enabling the entire memory to be written in less than 640ms. The X2816C also features DATA Polling, a system software support scheme used to indicate the early completion of a write cycle. Xicor E2PROMs are designed and tested for applica- tions requiring extended endurance. Inherent data re- tention is greater than 100 years. 16K X2816C 2048 x 8 Bit PIN CONFIGURATION 3852 FHD F02.1 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC A8 A9 WE OE A10 CE I/O7 I/O6 I/O5 I/04 I/O3 X2816C PLASTIC DIP SOIC 3852 FHD F03 A6 A5 A4 A3 A2 A1 A0 NC I/O0 A8 A9 NC NC OE A10 CE I/O7 I/O6 4321 32 31 30 14 15 16 17 18 19 20 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 X2816C PLCC LCC |
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