N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

09/06/2007 Rev.1.00

www.SiliconStandard.com

1

SSM03N70GH/GJ

PRODUCT SUMMARY

Repetitive Avalanche Rated

Fast Switching Speed

Simple Drive Requirement

DESCRIPTION

The TO-252 package is universally preferred for all commercial-

Industrial surface mount applications and suited for AC/DC converters.

The through-hole version (SSM03N70GH/GJ) is available for low-profile

applications.

ABSOLUTE MAXIMUM RATINGS

600V

3.6Ω

3.3A

G

D

S

G D

S

TO-252(H)

G

D S

TO-251(J)

Symbol

Units

Drain-Source Voltage

V

Gate-Source Voltage

V

A

A

Pulsed Drain Current

1

A

Total Power Dissipation

W

W/℃

Single Pulse Avalanche Energy

2

mJ

Avalanche Current

A

Repetitive Avalanche Energy

mJ

℃

Operating Junction Temperature Range

℃

THERMAL DATA

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

2.8

℃/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

110

℃/W

Parameter

3.3

Parameter

-55 to 150

85

±30

3.3

Storage Temperature Range

Linear Derating Factor

-55 to 150

0.36

45

13.2

RoHS-compliant