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X28HT010D-20 Datasheet(PDF) 1 Page - Xicor Inc. |
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X28HT010D-20 Datasheet(HTML) 1 Page - Xicor Inc. |
1 / 13 page X28HT010 1 High Temperature, 5 Volt, Byte Alterable E2PROM © Xicor, Inc. 1991, 1995, 1996 Patents Pending Characteristics subject to change without notice 6613-1.5 8/5/97 T2/C0/D0 EW FEATURES • 175 °C Full Functionality • Simple Byte and Page Write —Single 5V Supply —Self-Timed —No Erase Before Write —No Complex Programming Algorithms —No Overerase Problem • Highly Reliable Direct Write™ Cell —Endurance: 10,000 Write Cycles —Data Retention: 100 Years —Higher Temperature Functionality is Possible by Operating in the Byte Mode. DESCRIPTION The Xicor X28HT010 is a 128K x 8 E2PROM, fabricated with Xicor's proprietary, high performance, floating gate CMOS technology which provides Xicor products supe- rior high temperature performance characteristics. Like all Xicor programmable non-volatile memories the X28HT010 is a 5V only device. The X28HT010 features the JEDEC approved pinout for byte-wide memories, compatible with industry standard EPROMs. The X28HT010 supports a 256-byte page write opera- tion, effectively providing a 19 µs/byte write cycle and enabling the entire memory to be typically written in less than 2.5 seconds. Xicor E2PROMs are designed and tested for applica- tions requiring extended endurance. Data retention is specified to be greater than 100 years. 1M X28HT010 128K x 8 Bit PIN CONFIGURATIONS 6613 FHD F02 VBB A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC WE NC A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 X28HT010 FLAT PACK CERDIP SOIC (R) X28HT010 (BOTTOM VIEW) 14 A0 16 I/O1 18 VSS 11 A3 9 A5 7 A7 15 I/O0 17 I/O2 19 I/O3 5 A15 2 NC 36 VCC 20 I/O4 21 I/O5 34 NC 23 I/O7 25 A10 27 A11 29 A8 22 I/O6 32 NC 6613 FHD F21 24 CE 26 OE 28 A9 30 A13 13 A1 12 A2 10 A4 8 A6 4 A 16 3 V BB 1 NC 35 WE 33 NC 31 A14 6 A12 PGA |
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