HFU2N65 datasheet(3/7 Pages) SEMIHOW

Part #	HFU2N65

Description	650V N-Channel MOSFET

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Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

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◎ SEMIHOW REV.A0,Nov 2008

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Typical Characteristics

10

-1

10

0

10

1

0

50

100

150

200

250

300

350

400

450

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0

3

6

9

12

15

18

* Note : T

J = 25

oC

V

GS = 20V

V

GS = 10V

I

D , Drain Current [A]

0

1

2

3

4

5

6

7

8

9

10

0

2

4

6

8

10

12

V

DS = 325V

V

DS = 130V

V

DS = 520V

* Note : I

D = 1.8 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

10

-2

10

-1

10

0

* Note :

1. 250μ s Pulse Test

2. T

C = 25

oC

V

GS

Top :

15 V

10 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

V

DS , Drain-Source Voltage [V]

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