Switch Mode series NPN silicon Power Transistor

KSH13007AF

Switch Mode series NPN silicon Power Transistor

- High voltage, high speed power switching

- Suitable for switching regulator, inverters motor controls

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector Emitter Voltage

V

700

400

V

V

8 Amperes

NPN Silicon Power Transistor

80 Watts

TO-220F

1. Base

2. Collector

3. Emitter

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

Collector Dissipation(Tc=25℃)

Junction Temperature

Storage Temperature

400

9

8

16

4

40

150

-65~150

V

V

A

A

A

W

℃

℃

1 2

3

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Emitter Breakdown Voltage

400

V

Emitter Cut-off Current

1

㎃

*DC Current Gain

8

5

60

30

5

30

*Collector-Emitter Saturation Voltage

1

2

3

V

V

V

*Base-Emitter Saturation Voltage

1.2

1.6

V

V

Output Capacitance

80

㎊

Current Gain Bandwidth Product

4

㎒

T

CE

Turn on Time

Vcc=125V, Ic=5A

1.6

㎲

Storage Time

3.0

㎲

Fall Time

0.7

㎲

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

S

S

SemiHow Symbol

Package Mark information.

R

15 ~ 28

Note.

◎ SEMIHOW REV.A1,Oct 2007

YWW

Z

KSH13007AF

YWW

Y; year code, WW; week code

Z

hFE1 Classification

hFE1

Classification

O

26 ~ 39

O1(26~33), O2(31~39)

Y

37 ~ 50