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 SEMIHOW
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3 page 
◎ SEMIHOW REV.A0,Mar 2010 Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] 2 4 6 8 10 10 -1 10 0 10 1 150 oC 25 oC -55 oC ※ Notes : 1. V DS = 50V 2. 250μ s Pulse Test V GS, Gate-Source Voltage [V] 0 3 6 9 12 15 18 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V GS = 20V V GS = 10V ※ Note : T J = 25 ℃ I D, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ V SD, Source-Drain voltage [V] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 V DS = 400V V DS = 160V V DS = 640V ※ Note : I D = 7.0A Q G, Total Gate Charge [nC] |
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