Part Name
         Description
HFH7N80

 800V N-Channel MOSFET ( 8 Page)


SEMIHOW
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◎ SEMIHOW REV.A0,Mar 2010
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* Notes :
1. Z
θJC(t) = 0.63
oC/W Max.
2. Duty Factor, D=t
1/t2
3. T
JM - TC = PDM * Z
θJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Square Wave Pulse Duration [sec]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
Typical Characteristics (continued)
t
2
t
1
P
DM
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. V
GS = 0 V
2. I
D = 250 μ A
T
J, Junction Temperature [
oC]
25
50
75
100
125
150
0
2
4
6
8
T
C, Case Temperature [
℃]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
µs
DC
10 ms
1 ms
100
µs
Operation in This Area
is Limited by R
DS(on)
※ Notes :
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS = 10 V
2. I
D = 3.5 A
T
J, Junction Temperature [
oC]



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