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HFP640 Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HFP640 Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
1 / 8 page ◎ SEMIHOW REV.A0,July 2005 2 1 3 BVDSS = 200 V RDS(on) typ = 0.145Ω ID = 18 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V 100% Avalanche Tested Thermal Resistance Characteristics FEATURES Absolute Maximum Ratings TC=25℃ unless otherwise specified TO-220 1.Gate 2. Drain 3. Source HFP640 200V N-Channel MOSFET Symbol Parameter Value Units VDSS Drain-Source Voltage 200 V ID Drain Current – Continuous (TC = 25℃) 18 A Drain Current – Continuous (TC = 100℃) 11.4 A IDM Drain Current – Pulsed (Note 1) 72 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 139 W 1.11 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 0.9 ℃/W RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 July 2005 |
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