Part Name
         Description
HFP10N65S

 650V N-Channel MOSFET ( 8 Page)


SEMIHOW
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◎ SEMIHOW REV.A0,MAY 2009
TJ, Junction Temperature [oC]
Typical Characteristics (continued)
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Note :
1. V
GS = 10 V
2. I
D = 4.6 A
T
J, Junction Temperature [
oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* N o te s :
1 . Z
θ JC (t ) = 0 . 8
o C/W M a x .
2 . D u ty F a c to r , D = t
1 /t 2
3 . T
JM - T C = P DM * Z θ JC (t )
s in g le p u ls e
D= 0 .5
0.02
0.2
0.05
0.1
0.01
t
1 , S q uar e W a v e P u l s e D u r a t i on [ s ec ]
t2
t1
PDM
25
50
75
100
125
150
0
2
4
6
8
10
T
C, Case Temperature [
oC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10 μs
100 ms
DC
10 ms
1 ms
100 μs
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]



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