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HFH19N60 Datasheet(PDF) 1 Page - SemiHow Co.,Ltd.

Part # HFH19N60
Description  600V N-Channel MOSFET
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Manufacturer  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
Logo SEMIHOW - SemiHow Co.,Ltd.

HFH19N60 Datasheet(HTML) 1 Page - SemiHow Co.,Ltd.

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◎ SEMIHOW REV.A0,OCT 2009
3
2
1
BV
DSS = 600 V
R
DS(on) typ = 0.3 Ω
I
D = 18.5 A
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 95 nC (Typ.)
 Extended Safe Operating Area
 Lower R
DS(ON) : 0.3 Ω (Typ.) @VGS=10V
 100% Avalanche Tested
Thermal Resistance Characteristics
FEATURES
Absolute Maximum Ratings
T
C=25℃ unless otherwise specified
HFH19N60
600V N-Channel MOSFET
Symbol
Parameter
Value
Units
V
DSS
Drain-Source Voltage
600
V
I
D
Drain Current
– Continuous (T
C = 25℃)
18.5
A
Drain Current
– Continuous (T
C = 100℃)
11.7
A
I
DM
Drain Current
– Pulsed
(Note 1)
74
A
V
GS
Gate-Source Voltage
±30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1150
mJ
I
AR
Avalanche Current
(Note 1)
18.5
A
E
AR
Repetitive Avalanche Energy
(Note 1)
30
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C = 25℃)
- Derate above 25℃
300
W
2.38
W/℃
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
℃
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
--
0.42
℃/W
RθCS
Case-to-Sink
0.24
--
RθJA
Junction-to-Ambient
--
40
OCT 2009
TO-3P
1.Gate 2. Drain 3. Source


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