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SS6611G Datasheet(PDF) 11 Page - Silicon Standard Corp. |
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SS6611G Datasheet(HTML) 11 Page - Silicon Standard Corp. |
11 / 16 page www.SiliconStandard.com 11 of 16 SS6610/11G 4/21/2006 Rev.3.01 PIN DESCRIPTIONS PIN 1: FB Connect to pin 8:OUT to get +3.3V output, connect to pin 6:GND to get +5.0V output, or use a resistor network to set the output voltage between +1.8V and +5.5V. PIN 2: LBI Low-battery comparator input. Internally set at +1.23V to trip. PIN 3: LBO Open-drain low-battery comparator output. Output is low when VLBI is <1.23V. LBO is high-impedance during shutdown. PIN 4: REF 1.23V reference voltage. Bypass with a 0.1 µF capacitor. PIN 5: SHDN Shutdown input. High = operating, low = shutdown. PIN 6: GND Ground PIN 7: LX N-channel and P-channel power MOSFET drain. PIN 8: OUT Power output. OUT provides the bootstrap power to the IC. APPLICATION INFORMATION Overview The SS6610/11 series are high-efficiency, step-up DC/DC converters, featuring a built-in synchronous rectifier, which reduces size and cost by eliminating the need for an external Schottky diode. The start-up voltage of the SS6610 and SS6611 is as low as 0.8V and they operate with an input voltage down to 0.7V. Quiescent supply current is only 20 µA. The internal P-MOSFET on-resistance is typically 0.3 Ω to improve overall efficiency by minimizing AC losses. The output voltage can be easily set using two external resistors for 1.8V to 5.5V; connecting FB to OUT to get 3.3V; or connecting to GND to get 5.0V. The peak current of the internal switch is fixed at 1.0A (SS6610) or 0.65A (SS6611) for design flexibility. The current limits of the SS6610 and SS6611 are 1.0A and 0.65A respectively. The lower current limit allows the use of a physically smaller inductor in space-sensitive applications. PFM Control Scheme A key feature of the SS6610 series is a unique minimum-off-time, constant-on-time, current-limited, pulse-frequency-modulation (PFM) control scheme (see BLOCK DIAGRAM) with ultra-low quiescent current. The peak current of the internal N-MOSFET power switch can be fixed at 1.0A (SS6610) or 0.65A (SS6611). The switch frequency depends on either loading conditions or input voltage, and can range up to 500KHz. It is governed by a pair of one- shots that set a minimum off-time (1 µs) and a maximum on-time (4 µs). Synchronous Rectification Using the internal synchronous rectifier eliminates the need for an external Schottky diode, reducing the cost and board space. During the cycle of off- time, the P-MOSFET turns on and shuts the N- MOSFET off. Due to the low turn-on resistance of the MOSFET, the synchronous rectifier signif- cantly improves efficiency without an additional ex- ternal Schottky diode. Thus, the conversion effi- ciency can be as high as 93%. Reference Voltage The reference voltage (REF) is nominally 1.23V for excellent T.C. performance. In addition, the REF pin can source up to 100 µA to an external circuit with good load regulation (<10mV). A bypass capacitor of 0.1 µF is required for proper operation and good performance. |
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