03/29/2010

www.irf.com

1

S

D

G

GD

S

Gate

Drain

Source

PD - 97483

AUIRF1324S

AUIRF1324L

AUIRF1324S

TO-262

AUIRF1324L

G

D

S

GD

S

Features

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

Dynamic dV/dT Rating

l

175°C Operating Temperature

l

Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

l

Lead-Free, RoHS Compliant

l

Automotive Qualified *

Description

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

this design are a 175°C junction operating temperature, fast switch-

ing speed and improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety of other

applications.

*Qualification standards can be found at http://www.irf.com/

AUTOMOTIVE GRADE

24V

1.3m

Ω

340Ac

195A

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

Symbol

Parameter

Units

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Pulsed Drain Current

d

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

Gate-to-Source Voltage

V

Single Pulse Avalanche Energy (Thermally Limited)

e

mJ

Avalanche Current

Ãd

A

Repetitive Avalanche Energy

d

mJ

dv/dt

Peak Diode Recovery

f

V/ns

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case

k

–––

0.50

°C/W

Junction-to-Ambient (PCB Mounted, steady-state)

j

–––

40

Max.

340

240

1420

195

A

°C

300

-55 to + 175

± 20

2.0

270

See Fig. 14, 15, 22a, 22b

300

0.46