US6T8 datasheet(1/3 Pages) ROHM

Part #	US6T8

Description	General purpose amplification (−12V, −1.5A)

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Manufacturer	ROHM [Rohm]

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US6T8

Transistors

Rev.B

1/2

General purpose amplification (

−12V, −1.5A)

US6T8

Application

Low frequency amplifier

Driver

Features

1) A collector current is large.

2) Collector saturation voltage is low.

VCE (sat)

≤ −200mV

At IC = −500mA / IB = −25mA

Dimensions (Unit : mm)

ROHM : TUMT6

Abbreviated symbol : T08

Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

Tj

Tstg

Limits

−15

−12

−6

−1.5

400

150

−55 to +150

−3

∗1

Unit

V

A

mW/TOTAL

°C

∗2

1.0

W/TOTAL

∗3

0.7

W/ELEMENT ∗3

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

∗1 Single pulse, Pw=1ms

∗2 Each Terminal Mounted on a Recommended

∗3 Mounted on a 25mm×25mm× 0.8mm Ceramic substrate

t

Equivalent circuit

(1)

(2)

(3)

(6)

(5)

(4)

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

fT

−

400

−

MHz

BVCBO

−15

−−

V

BVCEO

−12

−−

V

BVEBO

−6

−−

V

ICBO

−−

−100

nA

IEBO

−−

−100

nA

VCE(sat)

−−85

−200

mV

hFE

270

−

680

−

Cob

−

12

−

pF

Transition frequency

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current gain

Corrector output capacitance

∗Pulsed

VCB

= −10V, IE=0A, f=1MHz

VCE

= −2V, IE=200mA, f=100MHz

IC

= −10µA

IC

= −1mA

IE

= −10µA

VCB

= −15V

VEB

= −6V

IC

= −500mA, IB= −25mA

VCE

= −2V, IC= −200mA

∗

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