UM6J1N

Data Sheet

3/3

www.rohm.com

○

c

2009 ROHM Co., Ltd. All rights reserved.

2009.04 - Rev.A

DRAIN CURRENT :

0.01

0.1

0.1

10

1

1

Pulsed

Ta=125

°C

75

°C

25

°C

−25°C

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current (

Ι )

DRAIN CURRENT :

0.01

0.1

0.1

10

1

1

Pulsed

Ta=125

°C

75

°C

25

°C

−25°C

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current (

ΙΙ )

DRAIN CURRENT :

0.01

0.1

0.1

10

1

1

Pulsed

Ta=125

°C

75

°C

25

°C

−25°C

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current (

ΙΙΙ )

DRAIN CURRENT :

Fig.10 Static Drain-Source

On-State Resistance

vs. Drain Current (

Ι )

0.01

0

1

10

0.1

1

Ta=25

°C

Pulsed

−4V

−10V

−4.5V

Notice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.