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Schottky barrier Diode

RB095B-30

Applications

Dimensions(Unit : mm)

Land size figure(Unit : mm)

General rectification

Features

1)Power mold type.(CPD)

3)High reliability

Construction

Silicon epitaxial planar

Structure

Taping dimensions(Unit : mm)

Absolute maximum ratings(Ta=25

°C)

Symbol

Unit

V

V

Io

A

A

Tj

°C

Tstg

°C

Electrical characteristic(Ta=25

°C)

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

-

-

0.425

V

Reverse current

-

-

200

µA

Thermal impedance

θjc

-

-

6.0

°C/W

junction to case

(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=125

°C

Conditions

Junction temperature

150

Storage temperature

-40 to +150

Average rectified forward current(*1)

6

Forward current surge peak (60Hz・1cyc)(*1)

35

Parameter

Parameter

Limits

Reverse voltage (repetitive peak)

35

Reverse voltage (DC)

30

CPD

16

2.3

1.6

2.3

6.0

(1) (3)

(2)

1/3

2009.11 - Rev.F