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KBJ25B Datasheet(PDF) 1 Page - Won-Top Electronics |
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KBJ25B Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 3 page KBJ25A – KBJ25M 1 of 3 © 2002 Won-Top Electronics KBJ25A – KBJ25M 25A BRIDGE RECTIFIER Features ! Diffused Junction ! Low Forward Voltage Drop A ! High Current Capability G ! High Reliability ! High Surge Current Capability B ! Ideal for Printed Circuit Boards C + ~ ~ - H K D J E Mechanical Data P R R ! Case: Molded Plastic ! Terminals: Plated Leads Solderable per M MIL-STD-202, Method 208 N ! Polarity: As Marked on Body ! Weight: 4.0 grams (approx.) ! Mounting Position: Any S ! Marking: Type Number G T L Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol KBJ 25A KBJ 25B KBJ 25D KBJ 25G KBJ 25J KBJ 25K KBJ 25M Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TC = 100°C (Note 1) IO 25 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 300 A Forward Voltage (per element) @IF = 12.5A VFM 1.1 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TC = 100°C IR 10 200 µA Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Note: 1. Device mounted on 7.5 x 7.5 x 0.8cm thick AL plate heatsink. WTE POWER SEMICONDUCTORS KBJ-6 Dim Min Max A 29.7 30.3 B 19.7 20.3 C 4.7 4.9 D 17.0 18.0 E 3.8 4.2 G 3.1Ø 3.4Ø H 2.3 2.7 J 0.9 1.1 K 2.0 2.4 L 0.6 0.7 M 4.4 4.8 N 3.4 — P 9.8 10.2 R 7.3 7.7 S 10.8 11.2 T 2.6 — All Dimensions in mm |
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