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EFM106B Datasheet(PDF) 1 Page - Rectron Semiconductor |
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EFM106B Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page  SURFACE MOUNT GLASS PASSIVATED VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FEATURES * Glass passivated device * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * Mounting position: Any * Weight: 0.09 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. ELECTRICAL CHARACTERISTICS (At TA = 25 oC unless otherwise noted) EFM101B THRU EFM106B DO-214AA MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) SUPER FAST SILICON RECTIFIER NOTES : 1. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. Dimensions in inches and (millimeters) 2004-12 RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 55 oC Peak Forward Surge Current IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VDC IO IFSM CJ TJ, TSTG VRMS Volts Volts Volts Amps 1.0 30 15 -65 to + 175 Amps pF 0 C UNITS EFM101B EFM104B EFM102B EFM105B EFM106B EFM103B 50 200 100 300 400 150 35 140 70 210 280 105 50 200 100 300 400 150 10 at Rated DC Blocking Voltage CHARACTERISTICS Maximum Reverse Recovery Time (Note 1) VF SYMBOL IR trr UNITS 0.95 5.0 uAmps nSec Maximum DC Reverse Current Maximum Forward Voltage at 1.0A DC Volts @TA = 25 oC @TA =100 oC EFM101B EFM104B EFM102B EFM105B EFM106B EFM103B 1.25 100 35 REV.A |
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