 |
 |
|
| QS5U26 |
|
|||||||||||||
 ROHM
|
| |||||||||||||
|
2 page 
QS5U26 Transistor Rev.B 2/4 Absolute maximum ratings (Ta=25 °C) ∗1 ∗1 ∗3 ∗2 Parameter V VDSS Symbol −20 V VGSS ±12 A ID ±1.5 A IDP ±6.0 A IS −0.75 A ISP −3.0 W / ELEMENT PD 0.9 V VRM 30 V VR 20 A IF 0.5 A IFSM 2.0 °C Tj 150 W / TOTAL PD 1.25 °C Tstg −55 to 150 Limits Unit Parameter Symbol Limits Unit Parameter Symbol Limits Unit ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz •1cyc. ∗3 Mounted on a ceramic board. Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Total power dissipatino Range of strage temperature Continuous Pulsed Continuous Pulsed °C Tch 150 Power Dissipation ∗3 W / ELEMENT PD 0.7 Power Dissipation ∗3 <MOSFET> <Di> <MOSFET AND Di> Electrical characteristics (Ta=25 °C) Parameter Symbol IGSS Yfs Min. −− ±10 µAVGS=±12V, VDS=0V VDD −15V VDD −15V Typ. Max. Unit Conditions Gate-source leakage V(BR) DSS −20 −− VID= −1mA, VGS=0V Drain-source breakdown voltage IDSS −− −1 µAVDS=−20V, VGS=0V Zero gate voltage drain current VGS (th) −0.7 −−2.0 V VDS= −10V, ID=−1mA Gate threshold voltage − 160 200 m Ω ID=−1.5A, VGS=−4.5V Static drain-source on-starte resistance RDS (on) − 180 240 m Ω ID=−1.5A, VGS=−4V Forward transfer admittance − 260 340 m Ω ID=−0.75A, VGS=−2.5V Input capacitance 1.0 −− SVDS= −10V, ID=−0.75A Output capacitance Ciss − 325 − pF VDS= −10V Reverse transfer capacitance Coss − 60 40 − pF VGS=0V Turn-on delay time Crss − 10 − pF f=1MHz Rise time td (on) − 10 − ns ID= −0.75A Turn-off delay time tr − 35 − ns Fall time td (off) − 10 − ns VGS= −4.5V Total gate charge tf − 4.2 − ns RL=20 Ω Gate-source charge Qg − 1.0 − nC RG=10 Ω Gate-drain charge Qgs − 1.1 − nC VGS= −4.5V Qgd −− nC ID= −1.5A ∗ ∗ ∗ ∗ ∗ ∗ ∗ Pulsed <MOSFET> Forward voltage VSD −− −1.2 V IS= −0.75A, VGS=0V Parameter Symbol Min. Typ. Max. Unit Conditions <Body diode (source−drain)> Forward voltage VF −− 0.36 V IF=0.1A −− 0.47 V IF=0.5A IR −− 100 µAVR=20V Reverse current Parameter Symbol Min. Typ. Max. Unit Conditions <Di> |
