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QS5U12 Datasheet(PDF) 1 Page - Rohm |
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QS5U12 Datasheet(HTML) 1 Page - Rohm |
1 / 5 page QS5U12 Transistors Rev.B 1/4 2.5V Drive Nch+SBD MOS FET QS5U12 Structure Silicon N-channel MOSFET Schottky Barrier DIODE Features 1) The QS5U12 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). 4) The Independently connected Schottky barrier diode has low forward voltage. Applications Load switch, DC / DC conversion External dimensions (Unit : mm) Each lead has same dimensions TSMT5 0~0.1 0.16 0.85 1.0MAX 0.7 (1) (3) (2) (4) (5) 0.4 1.9 2.9 0.95 0.95 Abbreviated symbol : U12 Packaging specifications Package Code Taping Basic ordering unit (pieces) QS5U12 TR 3000 Type Equivalent circuit (1) Anode (2) Source (3) Gate (4) Drain (5) Cathode ∗2 ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗1 (1) (2) (3) (5) (4) |
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