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SDD70N14 Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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SDD70N14 Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 4 page SDD70 Diode-Diode Modules ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit V VF IF=200A; TVJ=25 oC 1.48 VTO For power-loss calculations only 0.8 V rT 3 m IR TVJ=TVJM; VR=VRRM 10 mA TVJ=TVJM per diode; DC current per module RthJC 0.51 0.255 K/W per diode; DC current per module RthJK 0.71 0.355 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 uC QS TVJ=125 oC; IF=50A; -di/dt=3A/us 100 IRM 24 A FEATURES * International standard package * Planar passivated chips * Isolation voltage 3600 V~ * Copper base plate |
Similar Part No. - SDD70N14 |
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Similar Description - SDD70N14 |
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