MBR1060CT datasheet(1/2 Pages) SIRECTIFIER

Part #	MBR1060CT

Description	Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

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Manufacturer	SIRECTIFIER [Sirectifier Semiconductors]

Direct Link	http://www.sirectifier.com

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MBR1050CT thru MBR1060CT

Symbol

Characteristics

I(AV)

Maximum Average Forward Rectified Current

@TC=105 C

IFSM

Maximum Ratings

10

125

A

Unit

o

IR

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25 C

@TJ=125 C

CJ

Typical Junction Capacitance Per Element (Note 3)

TJ

Operating Temperature Range

0.1

15

3.0

220

-55 to +150

-55 to +175

mA

pF

o

Typical Thermal Resistance (Note 2)

ROJC

C/W

o

C

o

NOTES: 1. 300us Pulse Width, Duty Cycle 2%.

2. Thermal Resistance Junction To Case.

3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

dv/dt

Voltage Rate Of Change (Rated VR)

10000

V/us

C

o

TSTG

Storage Temperature Range

FEATURES

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* High surge capacity

* For use in low voltage, high frequency inverters, free

whelling, and polarity protection applications

MECHANICAL DATA

* Case: TO-220AB molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

Maximum Forward

Voltage (Note 1)

IF=5A

@TJ=25 C

IF=5A

@TJ=125 C

IF=10A @TJ=125 C

VF

0.65

0.80

0.90

V

o

Dim.

A

B

C

D

E

F

G

H

J

K

M

N

Q

R

Milimeter

Min.

Max.

12.70

13.97

14.73

16.00

9.91

10.66

3.54

4.08

5.85

6.85

2.54

3.18

1.15

1.65

2.79

5.84

0.64

1.01

2.54

BSC

4.32

4.82

1.14

1.39

0.35

0.56

2.29

2.79

Inches

Min.

Max.

0.500

0.550

0.580

0.630

0.390

0.420

0.139

0.161

0.230

0.270

0.100

0.125

0.045

0.065

0.110

0.230

0.025

0.040

0.100

BSC

0.170

0.190

0.045

0.055

0.014

0.022

0.090

0.110

Dimensions TO-220AB

A=Anode, C=Cathode, TAB=Cathode

A

C

C(TAB)

A

C

A

MBR1050CT

MBR1060CT

VRRM

V

50

60

VRMS

V

35

42

VDC

V

50

60

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MBR1060CT Datasheet(PDF) 1 Page - Sirectifier Semiconductors

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