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LMH6624J-QMLV Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMH6624J-QMLV Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 12 page MICROCIRCUIT DATA SHEET MNLMH6624-X REV 1A0 (Absolute Maximum Ratings) (Note 1) Supply Voltage (Vs) +6 Vdc Common Mode Input Voltage (Vcm) V+ - V- Differential Input Voltage (Vin) +1.2V Maximum Power Dissipation (Pd) (Note 2) 1.0W Lead Temperature +300 C (Soldering, 10 seconds) Junction Temperature (Tj) +175 C Storage Temperature Range -65 C < Ta < +150 C Thermal Resistance ThetaJa Junction-to-ambient CERAMIC DIP 130 C/W (Still Air Flow) 70 C/W (500LF/Min Air Flow) CERAMIC SOIC 180 C/W (Still Air Flow) 115 C/W (500LF/Min Air Flow) ThetaJC 17 C/W CERAMIC DIP 20 C/W CERAMIC SOIC Package Weight (Typical) 1090mg CERAMIC DIP 220mg CERAMIC SOIC ESD Tolerance (Note 3) 2000 V ESD Rating Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated within the listed test conditions. Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA) / ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower. Note 3: Human body model, 100 pF discharged through 1.5K Ohms. 3 |
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