tm

©2010 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGA20S120M Rev. A

March 2010

Thermal Characteristics

Notes:

1: Limited by Tjmax

Symbol

Description

Ratings

Units

Collector to Emitter Voltage

1200

V

Gate to Emitter Voltage

±25

V

Collector Current

40

A

Collector Current

20

A

Pulsed Collector Current

60

A

Diode Continuous Forward Current

40

A

Diode Continuous Forward Current

20

A

Maximum Power Dissipation

348

W

Maximum Power Dissipation

174

W

Operating Junction Temperature

-55 to +175

Storage Temperature Range

-55 to +175

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction to Case

--

0.43

Thermal Resistance, Junction to Case

--

0.43

Thermal Resistance, Junction to Ambient

--

40

G C E

TO-3PN

G

C

E

FGA20S120M

1200V, 20A Shorted-Anode IGBT

Features

• High speed switching

• High input impedance

• RoHS compliant

Applications

• Induction heating and Microvewave Oven

• Soft switching Application

General Description

Using advanced Field Stop Trench and shorted-anode technol-

ogy, Fairchild’s 1200V Shorted-Anode Trench IGBTs offer supe-

rior conduction and switching performances, and easy parallel

operation with exceptional avalanche capability. This device is

designed for Induction heating Microvewave Oven.