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VRF148A Datasheet(PDF) 1 Page - Microsemi Corporation |
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VRF148A Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 5 page VRF148A 50V, 30W, 175MHz The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V (BR)DSS = 170 V • 30W with 20dB Typical Gain @ 30MHz, 50V • 30W with 16dB Typical Gain @ 175MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • RoHS Compliant • 30:1 Load VSWR Capability at Specified Operating Conditions • Nitride Passivated • Refractory Gold Metallization • High Voltage Replacement for MRF148A Symbol Parameter VRF148A Unit V DSS Drain-Source Voltage 170 V I D Continuous Drain Current @ T C = 25°C 6 A V GS Gate-Source Voltage ±40 V P D Total Device dissipation @ T C = 25°C 115 W T STG Storage Temperature Range -65 to 150 °C T J Operating Junction Temperature 200 RF POWER VERTICAL MOSFET Maximum Ratings All Ratings: T C =25°C unless otherwise specified Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V (BR)DSS Drain-Source Breakdown Voltage (V GS = 0V, ID = 1mA) 170 V V DS(ON) On State Drain Voltage (I D(ON) = 2.5A, VGS = 10V) 3.0 5.0 I DSS Zero Gate Voltage Drain Current (V DS = 100V, VGS = 0V) 0.1 mA I GSS Gate-Source Leakage Current (V DS = ±20V, VDS = 0V) 1.0 μA g fs Forward Transconductance (V DS = 10V, ID = 2.5A) 0.8 mhos V GS(TH) Gate Threshold Voltage (V DS = 10V, ID = 10mA) 2.9 3.6 4.4 V Microsemi Website - http://www.microsemi.com Thermal Characteristics Symbol Characteristic Min Typ Max Unit R θJC Junction to Case Thermal Resistance 1.52 °C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. |
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