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c

2009 ROHM Co., Ltd. All rights reserved.

2009.07 - Rev.A

Data Sheet

RUM002N02

Measurement circuit

Fig.1-1 Switching time measurement circuit

D.U.T.

90%

50%

10%

90%

10%

50%

Pulse width

10%

90%

Fig.1-2 Switching waveforms

Notice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit

0

0.5

1

1.5

2

2.5

02

468

10

Ta=25°C

Pulsed

0.1

1

0.01

0.1

1

Pulsed

Ta= -25°C

Ta=25°C

Ta=75°C

Ta=125°C

Fig.12 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

Fig.10 Forward Transfer Admittance

vs. Drain Current

1

10

100

0.01

0.1

1

10

100

Ciss

Coss

Crss

Ta=25°C

f=1MHz

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

1.5

1

0.5

0.0

0.01

0.1

1

Ta

=125°C

75

°C

25

°C

−25°C

Fig.11 Source current vs.

source-drain voltage

=0V

Pulsed

0.01

0.1

10

100

1000

1

1

Fig.13 Switching characteristics

Ta

=25°C

=10V

=4V

=10Ω

Pulsed