R6020ANJ datasheet(3/6 Pages) ROHM

Part #	R6020ANJ

Description	10V Drive Nch MOSFET

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Manufacturer	ROHM [Rohm]

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c

2009.06 - Rev.A

Data Sheet

R6020ANJ

Electrical characteristics curves

0.001

0.01

0.1

1

10

0.01

0.1

1

10

100

VGS= 10V

Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= -25°C

0.001

0.01

0.1

1

10

100

0.0

1.5

3.0

4.5

6.0

VDS= 10V

Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= -25°C

0.01

0.1

1

10

100

0

0.5

1

1.5

VGS= 0V

Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= -25°C

Fig.8 Reverse Drain Current vs.

Sourse-Drain Voltage

0

0.2

0.4

0.6

0.8

0

5

10

15

Ta=25°C

Pulsed

ID= 10.0A

ID= 20.0A

0.01

0.1

1

10

100

0.01

0.1

1

10

100

VDS= 10V

Pulsed

Ta= -25°C

Ta= 25°C

Ta= 75°C

Ta= 125°C

Fig.7 Forward Transfer Admittance

vs. Drain Current

1

10

100

1000

10000

100000

0.01

0.1

1

10

100 1000 1000

0

Ciss

Coss

Crss

Ta= 25°C

f= 1MHz

VGS= 0V

Fig.9 Typical Capacitance vs.

Drain-Source Voltage

0.01

0.1

1

10

100

0.1

1

10

100

1000

Tc = 25°C

Single Pulse

DC operation

Pw=100u

Pw=1m

Operation in this

area is limited

by RDS(ON)

PW=10m

0

0.1

0.2

0.3

0.4

0.5

-50

0

50

100

150

VGS= 10V

Pulsed

ID= 10.0A

ID= 20.0A

0

1

2

3

4

5

6

-50

0

50

100

150

VDS= 10V

ID= 1mA

Fig.1 Maximum Safe Operating Aera

DRAIN-SOURCE VOLTAGE : VDS( V )

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current

DRAIN CURRENT : ID(A)

Fig.3 Gate Threshold Voltage

vs. Channel Temperature

CHANNEL TEMPERATURE: Tch (°C)

Fig.2 Typical Transfer Characteristics

GATE-SOURCE VOLTAGE : VGS(V)

Fig.5 Static Drain-Source On-State

Resistance vs. Gate Source

GATE-SOURCE VOLTAGE : VGS (V)

Fig.6 Static Drain-Source On-State

Resistance vs. Channel Temperature

CHANNEL TEMPERATURE: Tch(°C)

DRAIN-SOURCE VOLTAGE : VDS(V)

SOURCE-DRAIN VOLTAGE : VSD(V)

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