SD1224-02

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

DESCRIPTION:

The SD1224-02 is an epitaxial silicon NPN planar transistor designed

primarily for 28 V FM Class C RF amplifiers utilized in ground station

transmitters. This device utilizes ballasted emitter resistors and

improved metallization systems to achieve optimum load mismatch

capability.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

35

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

4.0

V

Device Current

5.0

A

Power Dissipation

60

W

Junction Temperature

+200

°C

Storage Temperature

-65 to +150

°C

Thermal Data

Junction-Case Thermal Resistance

2.9

°C/W

Features

• 175 MHz

• 28 VOLTS

• CLASS C

• COMMON EMITTER

• EFFICIENCY 60% MIN.

• P

• G

RF AND MICROWAVE TRANSISTORS

VHF FM APPLICATIONS