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REV. B

STRUCTURE

SILICON MONOLITHIC INTEGRATED CIRCUIT

FUNCTION

HIGH SPEED SINGLE CMOS OPERATIONAL AMPLIFIER

PRODUCT SERIES

BU7481G

BU7481SG

FEATURES

・Wide output voltage range(VSS～VDD)

・Wide operating temperature range (BU7481SG：-40[℃]～105[℃])

・Low input bias current(1[pA] typ.)

・Slew Rate(3.2[V/μs] typ.)

・Low supply current(420[μA] typ.)

・Low power supply voltage operation(1.8[V]～5.5[V])

○ABSOLUTE MAXIMUM RATINGS(Ta=25[℃])

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD-VSS

＋7

V

Power dissipation

Pd

540(*1)(*2)

mW

Differential Input Voltage(*3)

Vid

VDD-VSS

V

Input Common-mode Voltage Range

Vicm

(VSS-0.3)～VDD+0.3

V

Operating Temperature range

Topr

BU7481

-40～+85

℃

BU7481S

-40～+105

Storage Temperature Range

Tstg

-55～+125

℃

Maximum junction Temperature

Tjmax

+125

℃

・This IC is not designed for protection against radioactive rays.

(*1) To use at temperature above Ta＝25[℃] reduce 5.4[mW].

(*2) Mounted on a glass epoxy PCB(70[mm]×70[mm]×1.6[mm]).

(*3) The voltage difference between inverting input and non-inverting input is the differential input voltage.

Then input terminal voltage is set to more than VSS.

○OPERATING CONDITION(BU7481G:Ta=-40[℃]～+85[℃] BU7481SG:Ta=-40[℃]～+105[℃])

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

＋1.8～＋5.5 (Single Supply)

V