GC9981 – GC9989

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

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Schottky Barrier Diodes

Ultra High Drive Monolithic

TM

®

RoHS Compliant

Copyright

 2007

Rev: 2009-01-19

IMPORTANT:

For the most current data, consult our web site: www.microsemi.com

Specifications are subject to change, consult the factory for further information.

These devices are ESD sensitive and must be handled use using ESD precautions.

D E SCRI PTI ON

Microsemi’s Schottky Barrier devices are currently available in the eight

junction ring quad configuration. Devices are available in monolithic form for

hybrid applications as well as in hermetic or non-hermetic packages.

Monolithic devices are recommended for highest frequency, broadband

designs. The beamlead design eliminates the problems associated with wire

bonding very small junction devices thus improving reliability and

performance in MIC applications. Our in house epitaxy process capability

insures repeatability for lowest conversion loss through Ku Band. A broad

range of unique metallization schemes produce Microsemi’s complete line of

barrier heights. Diodes are available with barrier heights ranging from 600 mV

to 1300 mV per leg. By optimizing epitaxy and metallization, these devices

achieve lowest Rs-Cj products resulting in exceptional conversion loss

performance. “High Rel” screening is available on packaged devices per your

requirements.

This series of devices meets RoHS requirements per EU Directive

2002/95/EC.

APPLICATIONS/BENEFITS



RF Mixers



Double Balanced Mixers



High Speed Switching



Motion Detection



Phase Detectors

APPLICATIONS

Schottky Barrier diodes are suitable for a variety of circuit applications

ranging from double balanced RF mixers to high speed switching and

modulation. The monolithic beamlead design minimizes parasitic inductance

and capacitance insuring repeatable performance through Ka band. With

junction capacitances as low as 0.06 pF. Monolithic 8 junction quads are

ideally suited for broad band high drive mixers through 26.5 GHz.

Ultra-High barrier diodes, (GC9980 Series) are designed for applications

where high drive levels are available, such as, Doppler mixers or motion

detection. Microsemi also has Schottky diodes available in Ultra-Low,

Medium and High Drive levels to fit virtually any circuit requirement.

ABSOLUTE MAXIMUM RATINGS AT 25º C

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

Maximum Power Handling

P

100

mW

Storage Temperature

-65 to +175

ºC

Operating Temperature

-65 to +150

ºC

KEY FEATURES



Monolithic Design for Lowest

Parasitics and Matched Junction

Characteristics



Low Noise Figure



Suitable for Applications to 26.5

GHz



Excellent Conversion Loss



Available High and Ultra-High

Barrier Heights



Can be Supplied as Monolithic

Devices for Hybrid Applications or

as Packaged Devices



RoHS Compliant

1

plated terminations. Consult factory for

details.