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APTM120H80FT3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTM120H80FT3G Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 5 page APTM120H80FT3G www.microsemi.com 2 – 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 IDSS Zero Gate Voltage Drain Current VDS = 1200V VGS = 0V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 12A 800 960 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 4 5 V IGSS Gate – Source Leakage Current VGS = ±30 V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 6696 Coss Output Capacitance 615 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 80 pF Qg Total gate Charge 260 Qgs Gate – Source Charge 42 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 12A 120 nC Td(on) Turn-on Delay Time 45 Tr Rise Time 27 Td(off) Turn-off Delay Time 145 Tf Fall Time Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 12A RG = 2.2Ω 42 ns Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 14 IS Continuous Source current (Body diode) Tc = 80°C 10 A VSD Diode Forward Voltage VGS = 0V, IS = - 12A 1.1 V dv/dt Peak Diode Recovery 25 V/ns Tj = 25°C 270 trr Reverse Recovery Time Tj = 125°C 640 ns Tj = 25°C 1.3 Qrr Reverse Recovery Charge IS = - 12A VR = 100V diS/dt = 100A/µs Tj = 125°C 3.5 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 12A di/dt ≤ 1000A/µs VDD ≤ 800V Tj ≤ 125°C |
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