APTM100A23STG

www.microsemi.com

3 – 7

Parallel diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

1000

V

350

Maximum Reverse Leakage Current

600

µA

DC Forward Current

60

A

1.9

2.3

2.2

Diode Forward Voltage

1.7

V

290

Reverse Recovery Time

390

ns

1340

Reverse Recovery Charge

di/dt = 400A/µs

4700

nC

Thermal and package characteristics

Symbol Characteristic

Min

Typ

Max

Unit

Transistor

0.18

Junction to Case Thermal Resistance

Diode

0.65

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

Operating junction temperature range

-40

150

Storage Temperature Range

-40

125

Operating Case Temperature

-40

100

°C

Torque Mounting torque

To Heatsink

M5

2.5

4.7

N.m

Wt

Package Weight

160

g

Symbol Characteristic

Min

Typ

Max

Unit

Resistance @ 25°C

50

k

Ω

3952

K

























−

=

T

T

B

R

R

T

1

1

exp

25

85

/

25

25

T: Thermistor temperature