APTM50AM38STG datasheet(5/7 Pages) MICROSEMI

Part #	APTM50AM38STG

Description	Phase leg Series & parallel diodes MOSFET Power Module

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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APTM50AM38STG

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Typical Performance Curve

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

5.5V

6V

6.5V

7V

7.5V

8V

0

50

100

150

200

250

300

350

0

5

10

15

20

25

VDS, Drain to Source Voltage (V)

VGS=10&15V

Low Voltage Output Characteristics

Transfert Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

0

50

100

150

200

250

012

3456

78

VGS, Gate to Source Voltage (V)

VDS > ID(on)xRDS(on)MAX

250µs pulse test @ < 0.5 duty cycle

RDS(on) vs Drain Current

VGS=10V

VGS=20V

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

0

50

100

150

200

ID, Drain Current (A)

Normalized to

VGS=10V @ 45A

0

20

40

60

80

100

25

50

75

100

125

150

TC, Case Temperature (°C)

DC Drain Current vs Case Temperature

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APTM50AM38STG Datasheet(PDF) 5 Page - Microsemi Corporation

APTM50AM38STG Datasheet(HTML) 5 Page - Microsemi Corporation

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