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APTGV50H120T3G Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTGV50H120T3G Datasheet(HTML) 4 Page - Microsemi Corporation |
4 / 9 page APTGV50H120T3G www.microsemi.com 4-9 Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3450 Coes Output Capacitance 330 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 220 pF Qg Total gate Charge 330 Qge Gate – Emitter Charge 35 Qgc Gate – Collector Charge VGS = 15V VBus = 600V IC = 50A 200 nC Td(on) Turn-on Delay Time 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 320 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω 30 ns Td(on) Turn-on Delay Time 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 360 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω 40 ns Eon Turn-on Switching Energy Tj = 125°C 6.9 Eoff Turn-off Switching Energy VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω Tj = 125°C 3.05 mJ RthJC Junction to Case Thermal resistance 0.4 °C/W 2.2 Bottom diode characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 30 A IF = 30A 2 2.5 IF = 60A 2.3 VF Diode Forward Voltage IF = 30A Tj = 125°C 1.8 V Tj = 25°C 370 trr Reverse Recovery Time Tj = 125°C 500 ns Tj = 25°C 660 Qrr Reverse Recovery Charge IF = 30A VR = 800V di/dt =200A/µs Tj = 125°C 3450 nC RthJC Junction to Case Thermal resistance 1.2 °C/W 3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 k Ω B 25/85 T25 = 298.15 K 3952 K − = T T B R R T 1 1 exp 25 85 / 25 25 T: Thermistor temperature RT: Thermistor value at T |
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