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APTGV30H60T3G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTGV30H60T3G
Description  Full - Bridge NPT & Trench Field Stop짰 IGBT Power module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGV30H60T3G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTGV30H60T3G
www.microsemi.com
2-9
All ratings @ Tj = 25°C unless otherwise specified
1. Top switches
1.1 Top Trench + Field Stop IGBT® characteristics
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
50
IC
Continuous Collector Current
TC = 80°C
30
ICM
Pulsed Collector Current
TC = 25°C
60
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
90
W
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C
60A @ 550V
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
µA
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 30A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 400µA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1600
Coes
Output Capacitance
110
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
50
pF
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
200
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10Ω
40
ns
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10Ω
60
ns
Tj = 25°C
0.16
Eon
Turn-on Switching Energy
Tj = 150°C
0.3
mJ
Tj = 25°C
0.7
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10Ω
Tj = 150°C
1.05
mJ
RthJC
Junction to Case Thermal resistance
1.6
°C/W


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