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| APTGT75DA60T1G |
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 MICROSEMI
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APTGT75DA60T1G www.microsemi.com 1 – 5 3 4 Q2 CR2 2 1 9 NTC 12 CR1 6 5 11 10 Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V TC = 25°C 100 IC Continuous Collector Current TC = 80°C 75 ICM Pulsed Collector Current TC = 25°C 140 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 250 W RBSOA Reverse Bias Safe Operating Area TJ = 150°C 150A @ 550V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Boost chopper Trench + Field Stop IGBT® Power Module VCES = 600V IC = 75A @ Tc = 80°C |
