 |
 |
|
| APTGT75A120T1G |
|
|||||||||||||
 MICROSEMI
|
| |||||||||||||
|
5 page 
APTGT75A120T1G www.microsemi.com 5 – 5 Forward Characteristic of diode TJ=25°C TJ=125°C TJ=125°C 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2 2.4 VF (V) Hard switching ZCS ZVS 0 10 20 30 40 50 60 0 20 40 60 80 100 120 IC (A) VCE=600V D=50% RG=4.7Ω TJ=125°C Tc=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
