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BU407 Datasheet(PDF) 1 Page - Wing Shing Computer Components |
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BU407 Datasheet(HTML) 1 Page - Wing Shing Computer Components |
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1 / 1 page GENERAL DESCRIPTION High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V CESM Collector-emitter voltage peak value V BE = 0V 330 V V CEO Collector-emitter voltage (open base) 150 V I C Collector current (DC) 7 A I CM Collector current peak value 15 A P tot Total power dissipation T mb 25 60 W V CEsat Collector-emitter saturation voltage I C = 5.0A; IB = 0.5A 1.0 V V F Diode forward voltage V t f Fall time I C=5A,-IB(end)=0.5A,VCC=60V 0.75 s SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V CESM Collector-emitter voltage peak value V BE = 0V - 330 V V CEO Collector-emitter voltage (open base) - 150 V V EBO Emitter-base oltage (open colloctor) 5 V I C Collector current (DC) - 7 A I B Base current (DC) - 4 A P tot Total power dissipation Tmb 25 - 60 W T stg Storage temperature -55 150 T j Junction temperature - 150 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT I CBO Collector-base cut-off current V CB=400V 5.0 mA I EBO Emitter-base cut-off current V EB=5V 1.0 mA V (BR)CEO Collector-emitter breakdown voltage I C=10mA 150 V V CEsat Collector-emitter saturation voltages I C = 5.0A; IB = 0.5A 1.0 V h FE DC current gain I C = 2.0A; VCE = 5V 30 f T Transition frequency at f = 5MHz I C = 0.5A; VCE = 10V 10 MHz C c Collector capacitance at f = 1MHz V CB = 10V pF t on On times I C=5A,-IB(end)=0.5A,VCC=60V us t s Tum-off storage time I C=5A,-IB(end)=0.5A,VCC=60V us t f Fall time I C=5A,-IB(end)=0.5A,VCC=60V 0.75 us ELECTRICAL CHARACTERISTICS TO-220 Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com BU407 SILICON EPITAXIAL PLANNAR TRANSISTOR |
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