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APTGF200DA120D3G Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTGF200DA120D3G Datasheet(HTML) 5 Page - Microsemi Corporation |
5 / 5 page APTGF200DA120D3G www.microsemi.com 5- 5 Forward Characteristic of diode TJ=25°C TJ=125°C 0 100 200 300 400 0 0.5 1 1.5 2 2.5 3 VF (V) ZCS hard switching ZVS 0 10 20 30 40 50 60 70 0 50 100 150 200 250 IC (A) VCE=600V D=50% RG=4.7 Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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