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APTGF90DA60T3AG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGF90DA60T3AG Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  APTGF90DA60T3AG www.microsemi.com 2 – 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 250 µA Tj = 25°C 2 2.5 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 100A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 1.5mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 4.3 Cres Reverse Transfer Capacitance VGE = 0V ; VCE = 25V f = 1MHz 0.4 nF QG Gate charge VGE= 15V ; VCE=300V IC=100A 240 nC Td(on) Turn-on Delay Time 25 Tr Rise Time 10 Td(off) Turn-off Delay Time 130 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2Ω 20 ns Td(on) Turn-on Delay Time 25 Tr Rise Time 11 Td(off) Turn-off Delay Time 150 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 100A RG = 2.2Ω 30 ns Eon Turn-on Switching Energy Tj = 125°C 1 Eoff Turn-off Switching Energy VGE = ±15V VBus = 300V IC = 100A RG = 2.2Ω Tj = 125°C 3 mJ Isc Short Circuit data VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C 450 A Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 35 IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 600 µA IF DC Forward Current Tc = 100°C 60 A IF = 60A 1.8 2.2 IF = 120A 2.2 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.5 V Tj = 25°C 25 trr Reverse Recovery Time Tj = 125°C 160 ns Tj = 25°C 70 Qrr Reverse Recovery Charge IF = 60A VR = 400V di/dt =400A/µs Tj = 125°C 960 nC |
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