2SK3019_2 datasheet(2/4 Pages) ROHM

Part #	2SK3019

Description	2.5V Drive Nch MOS FET

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Manufacturer	ROHM [Rohm]

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2SK3019

Transistor

Rev.C

2/3

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

IGSS

V(BR)DSS

IDSS

VGS(th)

RDS(on)

Ciss

|Yfs|

Coss

Crss

Min.

−

30

−

0.8

−

20

−

5

13

−

9

4

±1

−

1.0

1.5

8

−

713

−

µAVGS=±20V, VDS=0V

ID

=10µA, VGS=0V

VDS

=30V, VGS=0V

VDS

=3V, ID=100µA

ID

=10mA, VGS=4V

ID

=1mA, VGS=2.5V

VDS

=5V

ID

=10mA, VDS=3V

VGS

=0V

f

=1MHz

V

µA

V

Ω

pF

ms

pF

td(on)

−

15

−

ID

=10mA, VDD 5V

ns

tr

−

35

−

VGS

=5V

ns

td(off)

−

80

−

RL

=500Ω

ns

tf

−

80

−

RG

=10Ω

ns

Typ.

Max.

Unit

Conditions

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Static drain-source on-state

resistance

Electrical characteristic curves

0

1

23

45

0

0.05

0.1

0.15

DRAIN-SOURCE VOLTAGE : VDS (V)

3V

3.5V

2.5V

VGS

=1.5V

4V

2V

Fig.1 Typical output characteristics

Ta

=25°C

Pulsed

04

0.1m

100m

GATE-SOURCE VOLTAGE : VGS (V)

1

10m

3

2

1m

0.2m

0.5m

2m

5m

50m

20m

200m

Ta

=125°C

75

°C

25

°C

−25°C

VDS

=3V

Pulsed

Fig.2 Typical transfer characteristics

−50

0

1

1.5

2

CHANNEL TEMPERATURE : Tch (

°C)

0.5

−25

25

50

75

100

125

150

VDS

=3V

ID

=0.1mA

Pulsed

Fig.3 Gate threshold voltage vs.

channel temperature

0.001

1

2

50

DRAIN CURRENT : ID (A)

0.5

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

5

10

20

Ta

=125°C

75

°C

25

°C

−25°C

VGS

=4V

Pulsed

Fig.4 Static drain-source on-state

resistance vs. drain current (

Ι)

0.001

1

2

50

0.5

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

5

10

20

VGS

=2.5V

Pulsed

DRAIN CURRENT : ID (A)

Ta

=125°C

75

°C

25

°C

−25°C

Fig.5 Static drain-source on-state

resistance vs. drain current (

ΙΙ)

0

5

10

15

20

0

5

10

15

GATE-SOURCE VOLTAGE : VGS (V)

ID

=0.1A

Ta

=25°C

Pulsed

ID

=0.05A

Fig.6 Static drain-source

on-state resistance vs.

gate-source voltage

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