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BQ24600 Datasheet(PDF) 6 Page - Texas Instruments |
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BQ24600 Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 29 page  bq24600 SLUS891 – FEBRUARY 2010 www.ti.com ELECTRICAL CHARACTERISTICS (continued) 5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ < +125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT REGN REGULATOR VREGN_REG REGN regulator voltage VVCC > 10 V, CE = HIGH (0 - 40 mA load) 5.7 6.0 6.3 V IREGN_LIM REGN current limit VREGN = 0 V, VVCC > VUVLO 40 mA SAFETY TIMER TPRECHG Precharge safety timer range(1) Precharge time before fault occurs 1440 1800 2160 s TCHARGE Internal five hour safety timer(1) 4.25 5 5.75 hr BATTERY DETECTION tWAKE Wake timer Max time charge is enabled 500 ms IWAKE Wake current RSENSE = 10 mΩ 50 125 200 mA tDISCHARGE Discharge timer Max time discharge current is applied 1 sec IDISCHARGE Discharge current 8 mA IFAULT Fault current after a timeout fault 2 mA VWAKE Wake threshold ( w.r.t. VREG) Voltage on VFB to detect battery absent during wake 50 mV VDISCH Discharge threshold Voltage on VFB to detect battery absent during discharge 1.55 V PWM HIGH SIDE DRIVER (HIDRV) High side driver (HSD) turn-on RDS_HI_ON VBTST – VPH = 5.5 V 3.3 6 Ω resistance RDS_HI_OFF High side driver turn-off resistance VBTST – VPH = 5.5 V 1 1.3 Ω Bootstrap refresh comparator threshold VBTST_REFRESH VBTST – VPH when low side refresh pulse is requested 4.0 4.2 V voltage PWM LOW SIDE DRIVER (LODRV) RDS_LO_ON Low side driver (LSD) turn-on resistance 4.1 7 Ω RDS_LO_OFF Low side driver turn-off resistance 1 1.4 Ω PWM DRIVERS TIMING Dead time when switching between LSD and HSD, no Driver dead time 30 ns load at LSD and HSD PWM OSCILLATOR VRAMP_HEIGHT PWM ramp height As percentage of VCC 7% PWM switching frequency(1) 1020 1200 1380 kHz INTERNAL SOFT START (8 steps to regulation current ICHARGE) Soft Start Steps 8 step Soft Start Step Time 1.6 ms CHARGER SECTION POWER-UP SEQUENCING Delay from when CE = 1 to when the charger is allowed to Charge-enable delay after power-up 1.5 s turn on LOGIC IO PIN CHARACTERISTICS (CE, STAT, PG) VIN_LO CE input low threshold voltage 0.8 V VIN_HI CE input high threshold voltage 2.1 VBIAS_CE CE input bias current V = 3.3V (CE has internal 1M Ω pulldown resistor) 6 mA VOUT_LO STAT, PG output low saturation voltage Sink current = 5 mA 0.5 V IOUT_HI Leakage current V = 32 V 1.2 µA (1) Verified by design. 6 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 |
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