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2SD2150 Datasheet(PDF) 1 Page - Rohm |
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2SD2150 Datasheet(HTML) 1 Page - Rohm |
1 / 3 page 1/2 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.11 - Rev.B Low Frequency Transistor (20V, 3A) 2SD2150 Features Dimensions(Unit : mm) 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) ( IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424. Structure Epitaxial planar type NPN silicon transistor Absolute maximum ratings (Ta=25 °C) Parameter VCBO VCEO VEBO IC PC Tj Tstg 40 V V V A (DC) W W °C °C 20 6 3 A (Pulse) 5 0.5 2 ∗1 ∗2 150 −55 to +150 Symbol Limits Unit ∗1 Single pulse Pw=10ms ∗2 Mounted on a 40×40×0.7mm Ceramic substrate. Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Electrical characteristics (Ta=25 °C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 40 20 6 − − 120 − − − − − − − − − 0.2 290 25 − − − 0.1 0.1 560 0.5 − − VIC =50 µA IC =1mA IE =50 µA VCB =30V VEB =5V VCE =2V, IC=0.1A IC/IB =2A/0.1A VCE =2V, IE= −0.5A, f=100MHz VCE =10V, IE=0A, f=1MHz V V µA µA − V ∗ MHz pF Typ. Max. Unit Conditions ∗ Measured using pulse current. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance 2SD2150 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 −0.05 +0.1 −0.1 +0.2 +0.2 −0.1 (3) (2) (1) 3.0 ±0.2 1.5 ±0.1 1.5 ±0.1 0.4 ±0.1 0.5 ±0.1 0.4 ±0.1 0.4 1.5 4.5 1.6 ±0.1 ∗ Denotes hFE Abbreviated symbol: CF ∗ |
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