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APT150DL60B2G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT150DL60B2G Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 4 page APT150DL60B2(G) DYNAMIC CHARACTERISTICS FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL THERMAL AND MECHANICAL CHARACTERISTICS Microsemi reserves the right to change, without notice, the specifications and information contained herein. Symbol Characteristic / Test Conditions Min Typ Max Unit t rr Reverse Recovery Time I F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C 51 ns t rr Reverse Recovery Time I F = 150A, diF/dt = -200A/μs V R = 400V, TC = 25°C 408 Q rr Reverse Recovery Charge 2387 nC I RRM Maximum Reverse Recovery Current 13 Amps t rr Reverse Recovery Time I F = 150A, diF/dt = -200A/μs V R = 400V, TC = 125°C 639 ns Q rr Reverse Recovery Charge 7253 nC I RRM Maximum Reverse Recovery Current 21 Amps t rr Reverse Recovery Time I F = 150A, diF/dt = -1000A/ μs V R = 400V, TC = 125°C 299 ns Q rr Reverse Recovery Charge 12075 nC I RRM Maximum Reverse Recovery Current 68 Amps Symbol Characteristic / Test Conditions Min Typ Max Unit R θJC Junction-to-Case Thermal Resistance 0.26 °C/W W T Package Weight 0.22 oz 5.9 g Torque Maximum Mounting Torque 10 lb·in 1.1 N·m 0 0.05 0.10 0.15 0.20 0.25 0.30 10-5 10-4 10-3 10-2 10 1.0 -1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t 2 t2 t1 Note: Dissipated Power (Watts) T J (°C) T C (°C) Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. 0.099 0.160 0.0160 0.380 1 Continuous current limited by package lead temperature. |
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