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APT75DL60SG Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APT75DL60SG
Description  Ultrasoft Recovery Rectifi er Diode
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT75DL60SG Datasheet(HTML) 1 Page - Microsemi Corporation

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PRODUCT BENEFITS
• Soft Switching - High Qrr
• Low Noise Switching
- Reduced Ringing
• Higher Reliability Systems
• Minimizes or eliminates
snubber
PRODUCT FEATURES
• Ultrasoft Recovery Times (trr)
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Ultra Low Forward Voltage
• Low Leakage Current
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Applications
- Induction Heating
• Resonant Mode Circuits
-ZVS and ZCS Topologies
- Phase Shifted Bridge
APT75DL60B(G)
APT75DL60S(G)
600V 75A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
1 - Cathode
2 - Anode
Back of Case - Cathode
1
2
TO
-24
7
1
2
D3PAK
1
2
(S)
(B)
Microsemi Website - http://www.microsemi.com
Ultrasoft Recovery Rectifier Diode
Symbol
Characteristic / Test Conditions
Ratings
Unit
V
R
Maximum D.C. Reverse Voltage
600
Volts
V
RRM
Maximum Peak Repetitive Reverse Voltage
V
RWM
Maximum Working Peak Reverse Voltage
I
F(AV)
Maximum Average Forward current (T
C = 112°C, Duty Cycle = 0.5)
75
Amps
I
F(RMS)
RMS Forward Currrent (Square wave, 50% duty)
121
I
FSM
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3 ms)
320
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 175
°C
T
L
Lead Temperature for 10 Seconds
300
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
V
F
Forward Voltage
I
F = 75A
1.25
1.6
Volts
I
F = 150A
2.0
I
F = 75A, TJ = 125°C
1.25
I
RM
Maximum Reverse Leakage Current
V
R = 600V
25
μA
V
R = 600V, TJ = 125°C
250
C
T
Junction Capacitance, V
R = 200V
69
pF
STATIC ELECTRICAL CHARACTERISTICS


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