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APT75DL60SG Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT75DL60SG Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page PRODUCT BENEFITS • Soft Switching - High Qrr • Low Noise Switching - Reduced Ringing • Higher Reliability Systems • Minimizes or eliminates snubber PRODUCT FEATURES • Ultrasoft Recovery Times (trr) • Popular TO-247 Package or Surface Mount D3PAK Package • Ultra Low Forward Voltage • Low Leakage Current PRODUCT APPLICATIONS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Applications - Induction Heating • Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge APT75DL60B(G) APT75DL60S(G) 600V 75A *G Denotes RoHS Compliant, Pb Free Terminal Finish. MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 TO -24 7 1 2 D3PAK 1 2 (S) (B) Microsemi Website - http://www.microsemi.com Ultrasoft Recovery Rectifier Diode Symbol Characteristic / Test Conditions Ratings Unit V R Maximum D.C. Reverse Voltage 600 Volts V RRM Maximum Peak Repetitive Reverse Voltage V RWM Maximum Working Peak Reverse Voltage I F(AV) Maximum Average Forward current (T C = 112°C, Duty Cycle = 0.5) 75 Amps I F(RMS) RMS Forward Currrent (Square wave, 50% duty) 121 I FSM Non-Repetitive Forward Surge Current (T J = 45°C, 8.3 ms) 320 T J, TSTG Operating and Storage Junction Temperature Range -55 to 175 °C T L Lead Temperature for 10 Seconds 300 Symbol Characteristic / Test Conditions Min Typ Max Unit V F Forward Voltage I F = 75A 1.25 1.6 Volts I F = 150A 2.0 I F = 75A, TJ = 125°C 1.25 I RM Maximum Reverse Leakage Current V R = 600V 25 μA V R = 600V, TJ = 125°C 250 C T Junction Capacitance, V R = 200V 69 pF STATIC ELECTRICAL CHARACTERISTICS |
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