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APT17F80B Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT17F80B Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page N-Channel FREDFET Absolute Maximum Ratings Thermal and Mechanical Characteristics G D S Single die FREDFET Unit A V mJ A Unit W °C/W °C oz g in·lbf N·m Ratings 18 11 70 ±30 797 9 Min Typ Max 500 0.25 0.11 -55 150 300 0.22 6.2 10 1.1 Parameter Continuous Drain Current @ T C = 25°C Continuous Drain Current @ T C = 100°C Pulsed Drain Current 1 Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Characteristic Total Power Dissipation @ T C = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Mounting Torque ( TO-247 Package), 6-32 or M3 screw Symbol I D I DM V GS E AS I AR Symbol P D RθJC RθCS T J,TSTG T L W T Torque TYPICAL APPLICATIONS • ZVSphaseshiftedandotherfullbridge •Halfbridge •PFCandotherboostconverter • Buckconverter •Singleandtwoswitchforward •Flyback FEATURES •FastswitchingwithlowEMI •Lowtrrforhighreliability •UltralowCrssforimprovednoiseimmunity •Lowgatecharge •Avalancheenergyrated •RoHScompliant TO-247 D3PAK APT17F80B APT17F80S 800V,18A,0.58ΩMax,trr≤250ns APT17F80B APT17F80S POWER MOS 8® is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti- mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Microsemi Website - http://www.microsemi.com |
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