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APT17F80B Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APT17F80B
Description  N-Channel FREDFET
Download  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT17F80B Datasheet(HTML) 1 Page - Microsemi Corporation

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N-Channel FREDFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Ratings
18
11
70
±30
797
9
Min
Typ
Max
500
0.25
0.11
-55
150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J,TSTG
T
L
W
T
Torque
TYPICAL APPLICATIONS
• ZVSphaseshiftedandotherfullbridge
•Halfbridge
•PFCandotherboostconverter
• Buckconverter
•Singleandtwoswitchforward
•Flyback
FEATURES
•FastswitchingwithlowEMI
•Lowtrrforhighreliability
•UltralowCrssforimprovednoiseimmunity
•Lowgatecharge
•Avalancheenergyrated
•RoHScompliant
TO-247
D3PAK
APT17F80B
APT17F80S
800V,18A,0.58ΩMax,trr≤250ns
APT17F80B
APT17F80S
POWER MOS 8® is a high speed, high voltage N-channel switch-mode power
MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-
mized for high reliability in ZVS phase shifted bridge and other circuits through reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a
greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control di/dt during switching, resulting in low EMI and reliable paralleling, even
when switching at very high frequency.
Microsemi Website - http://www.microsemi.com


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