2N6577 datasheet(3/4 Pages) MOTOROLA

Part #	2N6577

Description	NPN Silicon Power Darlington Transistors

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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3 / 4 page

2N6576 2N6577 2N6578

3

Motorola Bipolar Power Transistor Device Data

10 k

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

5 k

1 k

Figure 3. Collector Saturation Region

5

0.5

0.0001

0.1

4

+ 150

°C

25

°C

– 30

°C

10 A

3

2

1

500

200

0.2

1.0

2.0

15

5 A

0.01

0.05

0.5

5.0

10

0.02

VCE = 3 Vdc

0.005

0.0003

0.001 0.002

15 A

1 A

IB, BASE CURRENT (AMPS)

2 k

Figure 4. Collector Saturation Voltage

5

0.2

IC, COLLECTOR CURRENT (AMPS)

0.5

1

5

15

3

2

1

4

IC, COLLECTOR CURRENT (AMPS)

4

1.5

1

Figure 5. Base–Emitter Voltage

2

1.5

2

10

0.5

– 30

°C

3

0.2

0.5

1

5

15

2

10

IC/IB = 100

+ 25

°C

+150

°C

VBE(sat) @ IC/IB = 100

VBE(on) @ VCE = 3 V, 25°C

– 30

°C

+ 25

°C

TJ = + 150°C

Figure 6. Thermal Response

t, TIME (ms)

0.01

0.2

0.1

0.07

0.05

0.03

0.02

θJC(t) = r(t) θJC

θJC = 1.46

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

0.7

0.5

0.3

0.1

7.0

2.0

3.0

5.0

10

20

30

50

100

200 300

1000

500

0.1

0.2

0.3

0.5

1.0

0.7

70

700

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