HP147TS datasheet(1/2 Pages) HUASHAN

Part #	HP147TS

Description	PNP SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

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APPLICATIONS

High DC Current Gain

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ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

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ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCEO(SUS) Collector-Emitter Sustaining Voltage

-100

V

IC=-30mA, IB=0

ICEO

Collector Cutoff Current

-2

mA

VCE=-50V, IB=0

ICBO

Collector Cutoff Current

-1

mA

VCB=-100V, IE=0

IEBO

Emitter-Base Cutoff Current

-2

mA

VEB=-5V, IC=0

HFE（1）

DC Current Gain

1000

VCE=-4V, IC=-0.5A

HFE（2）

1000

VCE=-4V, IC=-3A

VCE(sat1)

Collector- Emitter Saturation Voltage

-2

V

IC=-5A, IB=-10mA

VCE(sat2)

-3

V

IC=-10A, IB=-40mA

VBE(sat)

Base- Emitter Saturation Voltage

-3.5

V

IC=-10A, IB=-40mA

VBE(on)

Base- Emitter On Voltage

-3

V

VCE=-4V,IC=-10A,

tD

Deiay time

0.15

uS

tR

Rise Time

0.55

uS

tS

Storage Time

2.5

uS

tF

Fall Time

2.5

uS

Vcc=-30V,Ic=-5A

IB1=-20mA

IB2=20mA

PNP DARLINGTON TRANSISTOR

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature……………………………… 150℃

PC——Collector Dissipation（Tc=25℃）…………………… 70W

VCBO——Collector-Base Voltage………………………… -100V

VCEO——Collector-Emitter Voltage……………………… -100V

VEBO——Emitter-Base Voltage……………………………… -5V

IC——Collector Current（DC）……………………………… -8A

IB——Base Current…………………………………………-0.5A

HP147TS

1―Base，B

2―Collector，C

3―Emitter, E

TO-220

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HP147TS Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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