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HCF10C60 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
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HCF10C60 Datasheet(HTML) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
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1 / 3 page  Shantou Huashan Electronic Devices Co.,Ltd. Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=10A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description Standard gate triggering SCR is suitable for the application where requiring high bi-directional blocking voltage capability and also suitable for over voltage protection,motor control cicuit in power tool,inrush current limit circuit and heating control system. █ Absolute Maximum Ratings（T a=25℃ ｕｎｌｅｓｓ ｏｔｈｅｒｗｉｓｅ ｓｐｅｃｉｆｉｅｄ） T stg ——Storage Temperature ------------------------------------------------------ －40~125℃ T j ——Operating Junction Temperature ---------------------------------------------- －40~125℃ VDRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V IT （RMS）——R.M.S On-State Current（180ºConduction Angles）---------------------------------------- 10A IT(AV) ——Average On-State Current (Half Sine Wave : TC = 111 °C) ----------------------------------------6.4A ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 110A I 2t ——Circuit Fusing Considerations(t = 8.3ms) ------------------------------------------------------------ 60A2s PGM ——Forward Peak Gate Power Dissipation (Ta=25℃） --------------------------------------------------- 5W PG(AV) ——Forward Average Gate Power Dissipation (Ta=25℃，ｔ＝８．３ｍｓ） ---------------------------------0.5W IFGM ——Forward Peak Gate Current -------------------------------------------------------------------------------- 2A VRGM ——Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V HCF10C60 |
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