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VG26V17400EJ-6 Datasheet(PDF) 11 Page - Vanguard International Semiconductor

Part # VG26V17400EJ-6
Description  4,194,304 x 4 - Bit CMOS Dynamic RAM
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Manufacturer  VML [Vanguard International Semiconductor]
Direct Link  http://www.vis.com.tw
Logo VML - Vanguard International Semiconductor

VG26V17400EJ-6 Datasheet(HTML) 11 Page - Vanguard International Semiconductor

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Document : 1G5-0142
Rev.1
Page 11
VIS
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Read Cycle
Write Cycle
Read - Modigy - Write Cycle
Parameter
Symbol
VG26 (V) (S) 17400E
Unit
Notes
-5
-6
Min
Max
Min
Max
Access time from RAS
tRAC
-
50
-
60
ns
12
Access time from CAS
tCAC
-
13
-
15
ns
13,14
Access time from column address
tAA
-
25
-
30
ns
14,15
Access time from OE
tOEA
-
13
-
15
ns
Read command setup time
tRCS
0
-
0
-
ns
7
Read command hold time to CAS
tRCH
0
-
0
-
ns
10,16
Read command hold time to RAS
tRRH
0
-
0
-
ns
16
Output buffer turn-off time
tOFF
0
13
0
15
ns
17
Output buffer turn-off time from OE
tOEZ
0
13
0
15
ns
17
Parameter
Symbol
VG26 (V) (S) 17400E
Unit
Notes
-5
-6
Min
Max
Min
Max
Write command setup time
tWCS
0
-
0
-
ns
7,18
Write command hold time
tWCH
8
-
10
-
ns
Write command pulse width
tWP
8
-
10
-
ns
Write command to RAS lead time
tRWL
13
-
15
-
ns
Write command to CAS lead time
tCWL
8
-
10
-
ns
Data-in setup time
tDS
0
-
0
-
ns
19
Data-in hold time
tDH
8
-
10
-
ns
19
Parameter
Symbol
VG26 (V) (S) 17400E
Unit
Notes
-5
-6
Min
Max
Min
Max
Read - modify - write cycle time
tRWC
125
-
150
-
ns
RAS to WE delay time
tRWD
65
-
80
-
ns
18
CAS to WE delay time
tCWD
30
-
35
-
ns
18
Column address to WE delay time
tAWD
40
-
50
-
ns
18
OE hold time from WE
tOEH
8
-
10
-
ns


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