HBDW94C datasheet(1/2 Pages) HUASHAN

Part #	HBDW94C

Description	PNP SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

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APPLICATIONS

Power Linear And Switching Applicatione.

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ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

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ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCEO(SUS) Collector-Emitter Sustaining Voltage

-100

V

IC=-100mA, IB=0

ICEO

Collector Cut-off Current

-1

mA

VCE=-100V, IB=0

IEBO

Emitter-Base Cutoff Current

-2

mA

VEB=-5V, IC=0

ICBO

Collector Cut-off Current

-100

μA

VCB=-100V, IE=0

HFE（1）

DC Current Gain

1000

VCE=-3V, IC=-3A

HFE（2）

750

20000

VCE=-3V, IC=-5A

HFE（3）

100

VCE=-3V, IC=-10A

VCE(sat1)

Collector- Emitter Saturation Voltage

-2

V

IC=-5A, IB=-20mA

VCE(sat2)

Collector- Emitter Saturation Voltage

-3

V

IC=-10A, IB=-100mA

VBE(sat1)

Base-Emitter Saturation Voltage

-2.5

V

IC=-5A,IB=-20mA

VBE(sat2)

Base-Emitter Saturation Voltage

-4

V

IC=-10A,IB=-100mA

PNP DARLINGTON TRANSISTOR

Tstg——Storage Temperature………………………… -65~150℃

Tj——Junction Temperature……………………………… 150℃

PC——Collector Dissipation（Tc=25℃）…………………… 80W

VCBO——Collector-Base Voltage……………………………-100V

VCEO——Collector-Emitter Voltage……………………… -100V

IC——Collector Current（DC）……………………………… -12A

IC——Collector Current（Pulse）………………………………-15A

IB——Base Current…………………………………………-0.2A

HBDW94C

1―Base，B

2―Collector，C

3―Emitter, E

TO-220

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HBDW94C Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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